Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field close to the recombination-wave threshold

Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field... The progress of convective current instability associated with slow recombination waves in Zn-compensated P-doped Si is studied experimentally. The drift is examined of an excess-carrier pulse in specimens exposed to an electric field close to the recombination-wave threshold, the pulse being created by intrinsic photoconductivity. It is established that the pulse travels in the direction of the drift of long-lived carriers, electrons. The speed of the pulse is found to agree with a predicted value to within an order of magnitude. Oscillations are discovered in the trailing edge of the specimen photocurrent response; their period is found to be equal to that of self-sustained current oscillations caused by slow recombination waves. Time-dependent profiles of photocurrent response are obtained that are in qualitative and quantitative agreement with ones arrived at in an earlier computer simulation. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field close to the recombination-wave threshold

Loading next page...
 
/lp/springer_journal/progression-of-an-excess-carrier-pulse-in-zn-compensated-p-doped-si-pUwPxPsc49
Publisher
Springer Journals
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739706020041
Publisher site
See Article on Publisher Site

Abstract

The progress of convective current instability associated with slow recombination waves in Zn-compensated P-doped Si is studied experimentally. The drift is examined of an excess-carrier pulse in specimens exposed to an electric field close to the recombination-wave threshold, the pulse being created by intrinsic photoconductivity. It is established that the pulse travels in the direction of the drift of long-lived carriers, electrons. The speed of the pulse is found to agree with a predicted value to within an order of magnitude. Oscillations are discovered in the trailing edge of the specimen photocurrent response; their period is found to be equal to that of self-sustained current oscillations caused by slow recombination waves. Time-dependent profiles of photocurrent response are obtained that are in qualitative and quantitative agreement with ones arrived at in an earlier computer simulation.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 21, 2006

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off