Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field close to the recombination-wave threshold

Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field... The progress of convective current instability associated with slow recombination waves in Zn-compensated P-doped Si is studied experimentally. The drift is examined of an excess-carrier pulse in specimens exposed to an electric field close to the recombination-wave threshold, the pulse being created by intrinsic photoconductivity. It is established that the pulse travels in the direction of the drift of long-lived carriers, electrons. The speed of the pulse is found to agree with a predicted value to within an order of magnitude. Oscillations are discovered in the trailing edge of the specimen photocurrent response; their period is found to be equal to that of self-sustained current oscillations caused by slow recombination waves. Time-dependent profiles of photocurrent response are obtained that are in qualitative and quantitative agreement with ones arrived at in an earlier computer simulation. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field close to the recombination-wave threshold

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739706020041
Publisher site
See Article on Publisher Site

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