Procedure of calculating parameters of sense amplifiers for the EEPROM and flash memory

Procedure of calculating parameters of sense amplifiers for the EEPROM and flash memory Designs of sense amplifiers for the EEPROM and flash memory are considered and their classification and analysis are performed. The variant of the design of the sense amplifier with the best overall parameters in terms of sensitivity; speed of response; and stability against interference, variation in temperature, and supply voltage is selected. The procedure for calculating the parameters of the selected sense amplifier is developed and the results of modeling the amplifier for CMOS 0.18-μm technology are presented. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Procedure of calculating parameters of sense amplifiers for the EEPROM and flash memory

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713070111
Publisher site
See Article on Publisher Site

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