Probing spatial heterogeneity in silicon thin films by Raman spectroscopy

Probing spatial heterogeneity in silicon thin films by Raman spectroscopy Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Scientific Reports Springer Journals

Probing spatial heterogeneity in silicon thin films by Raman spectroscopy

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Publisher
Nature Publishing Group UK
Copyright
Copyright © 2017 by The Author(s)
Subject
Science, Humanities and Social Sciences, multidisciplinary; Science, Humanities and Social Sciences, multidisciplinary; Science, multidisciplinary
eISSN
2045-2322
D.O.I.
10.1038/s41598-017-16724-4
Publisher site
See Article on Publisher Site

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