Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon

Principles of flicker noise spectroscopy and its application to disordered semiconductors:... Flicker noise spectroscopy in disordered semiconductors is gaining wide acceptance both in physical investigation and in analysis of various microelectronics processes. Its successful use as a diagnostic tool in microtechnology is a result of advances in fundamental studies of flicker noise in semiconductors with disordered structure. In this work, we systematize experimental data for flicker noise phenomena in disordered semiconductors, specifically, in ion-implanted silicon http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon

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Publisher
Springer Journals
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/BF02773270
Publisher site
See Article on Publisher Site

Abstract

Flicker noise spectroscopy in disordered semiconductors is gaining wide acceptance both in physical investigation and in analysis of various microelectronics processes. Its successful use as a diagnostic tool in microtechnology is a result of advances in fundamental studies of flicker noise in semiconductors with disordered structure. In this work, we systematize experimental data for flicker noise phenomena in disordered semiconductors, specifically, in ion-implanted silicon

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 4, 2007

References

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