Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors

Preparation of rare earth CeO2 thin films using metal organic decomposition method for... Investigation of metal organic decomposed rare earth cerium oxide thin films deposited on Si substrate by sol–gel spin coating technique was carried out. The structural properties have been examined by using XRD, Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The XRD confirms the cubic phase of CeO2 thin films with (111) plane observed at 28.54°. The FTIR and EDAX spectra confirm the formation of CeO2 films with atomic percentage of 19.39 and 54.82% of Ce and O2, respectively. Thickness of 60.11 nm of CeO2 film measured by cross sectional FESEM image, the average roughness of ~0.6 nm of 400 °C annealed CeO2 films were observed from AFM micrograph. The MOS capacitors were fabricated by using Ti/Au bilayer metal contact depositing by E-beam evaporator on CeO2/Si thin film for electrical measurements. Capacitance and conductance voltage measurement was carried out to determine the effective oxide charges (Qeff), interface trap density (Dit) and dielectric constant (k) and are 2.48 × 1012 cm−2, 1.26 × 1012 eV−1cm−2 and ~39, respectively. The effective metal work function of 5.68 for Ti/Au bilayer is observed to be higher than the work function of Ti or Au metals in vacuum. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors

Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors

J Mater Sci: Mater Electron (2017) 28:12503–12508 DOI 10.1007/s10854-017-7072-6 Preparation of rare earth CeO thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors 1 1 1 1 Khushabu S. Agrawal  · Vilas S. Patil  · Anil G. Khairnar  · Ashok M. Mahajan   Received: 6 February 2017 / Accepted: 2 May 2017 / Published online: 13 May 2017 © Springer Science+Business Media New York 2017 Abstract Investigation of metal organic decomposed rare 1 Introduction earth cerium oxide thin films deposited on Si substrate by sol–gel spin coating technique was carried out. The struc- The further scaling of silicon (Si) based Complementary tural properties have been examined by using XRD, Fou- Metal oxide semiconductor (CMOS) devices reached to rier transform infrared spectroscopy (FTIR), field emission its fundamental limit resulted into the high leakage current scanning electron microscopy (FESEM) and atomic force density due to tunnelling of electrons through thin oxide microscopy (AFM). The XRD confirms the cubic phase of layer [1]. In order to overcome these issues, high dielectric CeO thin films with (111) plane observed at 28.54°. The constant materials were employed for high performance, FTIR and EDAX spectra confirm the formation of CeO low power consumption CMOS transistors [2]. The num- films with atomic percentage of 19.39 and 54.82% of Ce ber of high-k dielectrics were investigated by the research- and O , respectively. Thickness of 60.11  nm of CeO film ers to replace the SiO such as HfO [3], ZrO [4], Al O 2 2 2 2 2 2 3 measured by cross sectional FESEM image, the aver- [5] including some rare earth oxides like La O [6], CeO 2 3 2 age roughness of ~0.6  nm of 400 °C annealed CeO films [7], Y O [8] etc. Among these high-k dielectrics, CeO 2 3 2 were observed from AFM micrograph. The MOS...
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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media New York
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-7072-6
Publisher site
See Article on Publisher Site

Abstract

Investigation of metal organic decomposed rare earth cerium oxide thin films deposited on Si substrate by sol–gel spin coating technique was carried out. The structural properties have been examined by using XRD, Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The XRD confirms the cubic phase of CeO2 thin films with (111) plane observed at 28.54°. The FTIR and EDAX spectra confirm the formation of CeO2 films with atomic percentage of 19.39 and 54.82% of Ce and O2, respectively. Thickness of 60.11 nm of CeO2 film measured by cross sectional FESEM image, the average roughness of ~0.6 nm of 400 °C annealed CeO2 films were observed from AFM micrograph. The MOS capacitors were fabricated by using Ti/Au bilayer metal contact depositing by E-beam evaporator on CeO2/Si thin film for electrical measurements. Capacitance and conductance voltage measurement was carried out to determine the effective oxide charges (Qeff), interface trap density (Dit) and dielectric constant (k) and are 2.48 × 1012 cm−2, 1.26 × 1012 eV−1cm−2 and ~39, respectively. The effective metal work function of 5.68 for Ti/Au bilayer is observed to be higher than the work function of Ti or Au metals in vacuum.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: May 13, 2017

References

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