Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method

Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method Graphene is an attractive 2D material for optoelectronics applications. However, due to the spontaneous nucleation characteristics of graphene growth on the metal substrates using chemical vapor deposition method, the polycrystalline graphene exhibited many crystal defects, leading to poor crystal quality. Properly controlling the density of nucleation sites is an important and necessary mean to increase the quality of graphene material. In this work, a new method to synthesize high-quality graphene on Cu substrate was reported by utilizing the CuO nanoparticles as nucleation sites. It was found that when annealing the copper substrate at 300 °C for 30 min with Ar:O2 flow ratio of 64:1, the copper substrate showed the lowest roughness and the density of CuO nucleation sites after hydrogen etching (H2 21 sccm at 1035 °C). Bilayer graphene with diagonal length of ~ 3 µm was successfully prepared centering on the CuO nucleation sites. This work supplied a new clue for high quality and monocrystalline graphene preparation. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8397-x
Publisher site
See Article on Publisher Site

Abstract

Graphene is an attractive 2D material for optoelectronics applications. However, due to the spontaneous nucleation characteristics of graphene growth on the metal substrates using chemical vapor deposition method, the polycrystalline graphene exhibited many crystal defects, leading to poor crystal quality. Properly controlling the density of nucleation sites is an important and necessary mean to increase the quality of graphene material. In this work, a new method to synthesize high-quality graphene on Cu substrate was reported by utilizing the CuO nanoparticles as nucleation sites. It was found that when annealing the copper substrate at 300 °C for 30 min with Ar:O2 flow ratio of 64:1, the copper substrate showed the lowest roughness and the density of CuO nucleation sites after hydrogen etching (H2 21 sccm at 1035 °C). Bilayer graphene with diagonal length of ~ 3 µm was successfully prepared centering on the CuO nucleation sites. This work supplied a new clue for high quality and monocrystalline graphene preparation.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Dec 21, 2017

References

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