The physical and chemical foundations of the atomic layer deposition (ALD) process, the advantages of ALD technology, and possible applications for further miniaturizing and improving the performance of semiconductor devices are considered. The results of the atomic layer deposition of the advanced nanoelectronic material hafnium oxide are discussed. The dielectric characteristics’ measurements and microstructure analysis results are given.
Russian Microelectronics – Springer Journals
Published: Jul 14, 2016
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