Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology

Practical aspects of producing MIS structures with good prospects using atomic layer deposition... The physical and chemical foundations of the atomic layer deposition (ALD) process, the advantages of ALD technology, and possible applications for further miniaturizing and improving the performance of semiconductor devices are considered. The results of the atomic layer deposition of the advanced nanoelectronic material hafnium oxide are discussed. The dielectric characteristics’ measurements and microstructure analysis results are given. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716040028
Publisher site
See Article on Publisher Site

Abstract

The physical and chemical foundations of the atomic layer deposition (ALD) process, the advantages of ALD technology, and possible applications for further miniaturizing and improving the performance of semiconductor devices are considered. The results of the atomic layer deposition of the advanced nanoelectronic material hafnium oxide are discussed. The dielectric characteristics’ measurements and microstructure analysis results are given.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 14, 2016

References

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