Power switching transistors based on gallium nitride epitaxial heterostructures

Power switching transistors based on gallium nitride epitaxial heterostructures The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage V th = +1.2 V and a maximum drain-source current I ds = 0.15 A/mm at the drain-source voltage V ds = +8 V. The drain-source breakdown voltage in the closed state is V b = 300 V at the drain-source distance L ds = 8.5 μm and drain-source voltage V ds = 0 V. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Power switching transistors based on gallium nitride epitaxial heterostructures

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Publisher
Pleiades Publishing
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739717020020
Publisher site
See Article on Publisher Site

Abstract

The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage V th = +1.2 V and a maximum drain-source current I ds = 0.15 A/mm at the drain-source voltage V ds = +8 V. The drain-source breakdown voltage in the closed state is V b = 300 V at the drain-source distance L ds = 8.5 μm and drain-source voltage V ds = 0 V.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jun 2, 2017

References

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