Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon

Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon General approaches are considered to the structural characterization of defects in solids by positron-annihilation spectroscopy. Positron annihilation is studied experimentally on proton-irradiated silicon wafers made to different specifications, using the angular distribution of annihilation photons. A parabolic and a Gaussian component are identified in the distribution curves. They are associated with the annihilation of Wheeler states in the bulk and near Si-ion cores, respectively. The densities of radiation-induced defects are deduced from the experimental data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2005 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-005-0027-2
Publisher site
See Article on Publisher Site

Abstract

General approaches are considered to the structural characterization of defects in solids by positron-annihilation spectroscopy. Positron annihilation is studied experimentally on proton-irradiated silicon wafers made to different specifications, using the angular distribution of annihilation photons. A parabolic and a Gaussian component are identified in the distribution curves. They are associated with the annihilation of Wheeler states in the bulk and near Si-ion cores, respectively. The densities of radiation-induced defects are deduced from the experimental data.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 19, 2005

References

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