General approaches are considered to the structural characterization of defects in solids by positron-annihilation spectroscopy. Positron annihilation is studied experimentally on proton-irradiated silicon wafers made to different specifications, using the angular distribution of annihilation photons. A parabolic and a Gaussian component are identified in the distribution curves. They are associated with the annihilation of Wheeler states in the bulk and near Si-ion cores, respectively. The densities of radiation-induced defects are deduced from the experimental data.
Russian Microelectronics – Springer Journals
Published: May 19, 2005
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