Porous-Silicon Formation in HF–HNO3–H2O Etchants

Porous-Silicon Formation in HF–HNO3–H2O Etchants The chemical formation of porous silicon in HF–HNO3–H2O etchants is studied experimentally. A technique is devised to determine the ranges in which the proportions of the acids should be varied in order to change from etch polishing to pore formation. The structure and properties of porous layers are examined in relation to the proportion of etchant ingredients. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Porous-Silicon Formation in HF–HNO3–H2O Etchants

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1014337308494
Publisher site
See Article on Publisher Site

Abstract

The chemical formation of porous silicon in HF–HNO3–H2O etchants is studied experimentally. A technique is devised to determine the ranges in which the proportions of the acids should be varied in order to change from etch polishing to pore formation. The structure and properties of porous layers are examined in relation to the proportion of etchant ingredients.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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