Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films

Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and... The effect of propene injection on the LPCVD of polycrystalline-silicon films by pyrolysis of SiH4 is studied experimentally. The deposition is carried out in a hot-wall reactor at 640–700°C. The pyrolysis activation energies are determined for zero and nonzero propene contents. Also addressed are the variation in process pattern with the longitudinal coordinate, the change in effective reaction order in propene when passing from 640 to 700°C, and the dependence of consumed silane percentage on the ratio of the total area of the wafers and the walls to the volume of the reaction zone. These relationships are explained within a model whereby the pyrolysis proceeds by a free-radical chain mechanism and basically follows a heterogeneous route at lower temperatures and a homogeneous route as well as a heterogeneous one at higher temperatures. It is found that polycrystalline-silicon films deposited in the presence of propene have a much lower conductivity and exhibit a much lower dissolution rate in a KOH etchant. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films

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Publisher
Springer Journals
Copyright
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1020282807704
Publisher site
See Article on Publisher Site

Abstract

The effect of propene injection on the LPCVD of polycrystalline-silicon films by pyrolysis of SiH4 is studied experimentally. The deposition is carried out in a hot-wall reactor at 640–700°C. The pyrolysis activation energies are determined for zero and nonzero propene contents. Also addressed are the variation in process pattern with the longitudinal coordinate, the change in effective reaction order in propene when passing from 640 to 700°C, and the dependence of consumed silane percentage on the ratio of the total area of the wafers and the walls to the volume of the reaction zone. These relationships are explained within a model whereby the pyrolysis proceeds by a free-radical chain mechanism and basically follows a heterogeneous route at lower temperatures and a homogeneous route as well as a heterogeneous one at higher temperatures. It is found that polycrystalline-silicon films deposited in the presence of propene have a much lower conductivity and exhibit a much lower dissolution rate in a KOH etchant.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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