The effect of propene injection on the LPCVD of polycrystalline-silicon films by pyrolysis of SiH4 is studied experimentally. The deposition is carried out in a hot-wall reactor at 640–700°C. The pyrolysis activation energies are determined for zero and nonzero propene contents. Also addressed are the variation in process pattern with the longitudinal coordinate, the change in effective reaction order in propene when passing from 640 to 700°C, and the dependence of consumed silane percentage on the ratio of the total area of the wafers and the walls to the volume of the reaction zone. These relationships are explained within a model whereby the pyrolysis proceeds by a free-radical chain mechanism and basically follows a heterogeneous route at lower temperatures and a homogeneous route as well as a heterogeneous one at higher temperatures. It is found that polycrystalline-silicon films deposited in the presence of propene have a much lower conductivity and exhibit a much lower dissolution rate in a KOH etchant.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud