Polarization modulation resistive switching in a lead-free ferroelectric Pt/Bi0.5Na0.5TiO3/La0.67Sr0.33MnO3 sandwiched heterostructure

Polarization modulation resistive switching in a lead-free ferroelectric... High-quality lead-free Bi0.5Na0.5TiO3 (BNT)/La0.67Sr0.33MnO3 (LSMO) bilayer was grown on SrTiO3 crystal by pulsed laser deposition method. Ferroelectric and electrical properties of the Pt/BNT/LSMO heterostructure have been investigated. Interestingly, an asymmetric current–voltage hysteresis exhibits a ferroelectric BNT modulated resistive switching characteristics in BNT/LSMO heterostructure without a forming process. The On/Off ratio of resistance switching behaviors is higher than 103 and retention time is longer than 105 s. The relationship between potential barriers and polarization charges at the Pt/BNT and BNI/LSMO interfaces has been discussed. The Pt/BNT/LSMO cell with both high On/Off ratio and long retention properties exhibits potentials in lead-free nonvolatile memory applications. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Polarization modulation resistive switching in a lead-free ferroelectric Pt/Bi0.5Na0.5TiO3/La0.67Sr0.33MnO3 sandwiched heterostructure

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media New York
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-7109-x
Publisher site
See Article on Publisher Site

Abstract

High-quality lead-free Bi0.5Na0.5TiO3 (BNT)/La0.67Sr0.33MnO3 (LSMO) bilayer was grown on SrTiO3 crystal by pulsed laser deposition method. Ferroelectric and electrical properties of the Pt/BNT/LSMO heterostructure have been investigated. Interestingly, an asymmetric current–voltage hysteresis exhibits a ferroelectric BNT modulated resistive switching characteristics in BNT/LSMO heterostructure without a forming process. The On/Off ratio of resistance switching behaviors is higher than 103 and retention time is longer than 105 s. The relationship between potential barriers and polarization charges at the Pt/BNT and BNI/LSMO interfaces has been discussed. The Pt/BNT/LSMO cell with both high On/Off ratio and long retention properties exhibits potentials in lead-free nonvolatile memory applications.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: May 24, 2017

References

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