PMN-PT thin films grown by sputtering on silicon substrate: influence of the annealing temperature on the physico-chemical and electrical properties of the films

PMN-PT thin films grown by sputtering on silicon substrate: influence of the annealing... Studies of piezoelectric and electrostrictive properties of (1−x)PMN-xPT thin films were carried out. We have chosen the compositions 90/10 and 70/30, which exhibit, respectively, mostly electrostrictive and piezoelectric behaviour in bulk material. Annealing temperature effects on PMN-PT structural, dielectric, ferroelectric and electromechanical properties have been investigated. We demonstrate that with conventional annealing the pure perovskite phase can be obtained at very low temperature (400°C) without any pyrochlore phase for the two compositions. We show that electromechanical response is a mix between electrostrictive and piezoelectric response for the two compositions. However, as can be easily understood, piezoelectric contribution is larger for 70/30. It is shown that electrical responses of the films obtained at 400°C are largely satisfied for many applications; for higher annealing temperature we observe an enhance of the electrical properties due to an improvement of the material quality in terms of crystalline structure. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Research on Chemical Intermediates Springer Journals

PMN-PT thin films grown by sputtering on silicon substrate: influence of the annealing temperature on the physico-chemical and electrical properties of the films

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Publisher
Springer Netherlands
Copyright
Copyright © 2008 by Springer
Subject
Chemistry; Catalysis; Physical Chemistry; Inorganic Chemistry
ISSN
0922-6168
eISSN
1568-5675
D.O.I.
10.1163/156856708783623465
Publisher site
See Article on Publisher Site

Abstract

Studies of piezoelectric and electrostrictive properties of (1−x)PMN-xPT thin films were carried out. We have chosen the compositions 90/10 and 70/30, which exhibit, respectively, mostly electrostrictive and piezoelectric behaviour in bulk material. Annealing temperature effects on PMN-PT structural, dielectric, ferroelectric and electromechanical properties have been investigated. We demonstrate that with conventional annealing the pure perovskite phase can be obtained at very low temperature (400°C) without any pyrochlore phase for the two compositions. We show that electromechanical response is a mix between electrostrictive and piezoelectric response for the two compositions. However, as can be easily understood, piezoelectric contribution is larger for 70/30. It is shown that electrical responses of the films obtained at 400°C are largely satisfied for many applications; for higher annealing temperature we observe an enhance of the electrical properties due to an improvement of the material quality in terms of crystalline structure.

Journal

Research on Chemical IntermediatesSpringer Journals

Published: Apr 15, 2009

References

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