Res. Chem. Intermed.
, Vol. 34, No. 2–3, pp. 201–215 (2008)
Koninklijke Brill NV, Leiden, 2008.
Also available online - www.brill.nl/rci
PMN-PT thin ﬁlms grown by sputtering on silicon
substrate: inﬂuence of the annealing temperature on the
physico-chemical and electrical properties of the ﬁlms
, M. DETALLE
, R. HERDIER
, DAVID JENKINS
and PASCAL ROUSSEL
IEMN – DOAE – MIMM, UMR CNRS 8520, Université de Valenciennes et du Hainaut–Cambrésis,
Le mont houy, 59313 Valenciennes Cedex 9, France
Laboratory for Ferroelectric Ceramics and Application, Research Centre for Information
Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences,
1295 Dingxi Road, Shanghai 200050, China
Centre for Research in Information Storage Technology, University of Plymouth, Drake Circus,
Plymouth PL4 8AA, UK
Laboratoire de Cristallochimie et Physico-chimie du Solide, Université Sciences et Techniques
de Lille, BP 90108, Villeneuve d’Ascq Cedex, France
Received 10 November 2006; accepted 20 January 2007
Abstract—Studies of piezoelectric and electrostrictive properties of (1 − x)PMN-xPT thin ﬁlms
were carried out. We have chosen the compositions 90/10 and 70/30, which exhibit, respectively,
mostly electrostrictive and piezoelectric behaviour in bulk material. Annealing temperature effects on
PMN-PT structural, dielectric, ferroelectric and electromechanical properties have been investigated.
We demonstrate that with conventional annealing the pure perovskite phase can be obtained at very
low temperature (400
C) without any pyrochlore phase for the two compositions. We show that
electromechanical response is a mix between electrostrictive and piezoelectric response for the two
compositions. However, as can be easily understood, piezoelectric contribution is larger for 70/30.
It is shown that electrical responses of the ﬁlms obtained at 400
C are largely satisﬁed for many
applications; for higher annealing temperature we observe an enhance of the electrical properties due
to an improvement of the material quality in terms of crystalline structure.
Keywords: Annealing temperature; silicon; thin ﬁlm; piezoelectricity; electrostrictivity.
One of the most studied relaxor ferroelectric materials is lead magnesium niobate
(PMN). A solid solution can be obtained when PbTiO
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