The plasma parameters and mechanisms of gallium arsenide (GaAs) reactive plasma etching in HCl-Ar and HCl-Cl2 mixtures under constant-current glow discharge conditions were investigated. The mathematical simulation of plasma helped to establish that the dilution of HCl with argon or chlorine results in opposite changes in the flux densities of chlorine atoms and ions. It was shown that variation in the GaAs etching rate in the HCl-Ar mixture corresponds to a change in the density of the chlorine atomic flux density on the surface. It was suggested that the nonmonotonic dependence of the etch rate upon the HCl-Cl2 mixture composition is caused by a change of the etching regime (its limiting stage) when the degree of coverage of the processed surface with the interaction of products varies.
Russian Microelectronics – Springer Journals
Published: Jul 13, 2013
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