Plasma parameters and mechanisms of GaAs reactive plasma etching in mixtures of HCl with argon and chlorine

Plasma parameters and mechanisms of GaAs reactive plasma etching in mixtures of HCl with argon... The plasma parameters and mechanisms of gallium arsenide (GaAs) reactive plasma etching in HCl-Ar and HCl-Cl2 mixtures under constant-current glow discharge conditions were investigated. The mathematical simulation of plasma helped to establish that the dilution of HCl with argon or chlorine results in opposite changes in the flux densities of chlorine atoms and ions. It was shown that variation in the GaAs etching rate in the HCl-Ar mixture corresponds to a change in the density of the chlorine atomic flux density on the surface. It was suggested that the nonmonotonic dependence of the etch rate upon the HCl-Cl2 mixture composition is caused by a change of the etching regime (its limiting stage) when the degree of coverage of the processed surface with the interaction of products varies. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Plasma parameters and mechanisms of GaAs reactive plasma etching in mixtures of HCl with argon and chlorine

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Publisher
Springer Journals
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713040021
Publisher site
See Article on Publisher Site

Abstract

The plasma parameters and mechanisms of gallium arsenide (GaAs) reactive plasma etching in HCl-Ar and HCl-Cl2 mixtures under constant-current glow discharge conditions were investigated. The mathematical simulation of plasma helped to establish that the dilution of HCl with argon or chlorine results in opposite changes in the flux densities of chlorine atoms and ions. It was shown that variation in the GaAs etching rate in the HCl-Ar mixture corresponds to a change in the density of the chlorine atomic flux density on the surface. It was suggested that the nonmonotonic dependence of the etch rate upon the HCl-Cl2 mixture composition is caused by a change of the etching regime (its limiting stage) when the degree of coverage of the processed surface with the interaction of products varies.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 13, 2013

References

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