An experiment is conducted on the diffusion of arsenic or phosphorus from an RF plasma into a porous-silicon film intended to serve as a source for the next diffusion step, the film being made by plasma etching or electrolytic anodization. The ultimate goal is to reduce the wafer temperature. It is shown that much lower temperatures are indeed possible with the diffusion technique considered. It is established that doping concentration is more uniform over the wafer surface if pores are arranged regularly, as with porous silicon produced by plasma etching. It is also established that plasma-assisted diffusion is mainly affected by the dispersion of pores in size, total pressure, the partial pressure of the doping agent (AsH3 or PH3), RF power, and wafer temperature. Porous-silicon films doped with As or P by plasma-assisted diffusion could be employed in power devices.
Russian Microelectronics – Springer Journals
Published: Oct 18, 2004
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