Plasma-Assisted Diffusion Doping of Porous-Silicon Films

Plasma-Assisted Diffusion Doping of Porous-Silicon Films An experiment is conducted on the diffusion of arsenic or phosphorus from an RF plasma into a porous-silicon film intended to serve as a source for the next diffusion step, the film being made by plasma etching or electrolytic anodization. The ultimate goal is to reduce the wafer temperature. It is shown that much lower temperatures are indeed possible with the diffusion technique considered. It is established that doping concentration is more uniform over the wafer surface if pores are arranged regularly, as with porous silicon produced by plasma etching. It is also established that plasma-assisted diffusion is mainly affected by the dispersion of pores in size, total pressure, the partial pressure of the doping agent (AsH3 or PH3), RF power, and wafer temperature. Porous-silicon films doped with As or P by plasma-assisted diffusion could be employed in power devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Plasma-Assisted Diffusion Doping of Porous-Silicon Films

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Publisher
Springer Journals
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000011095.09148.51
Publisher site
See Article on Publisher Site

Abstract

An experiment is conducted on the diffusion of arsenic or phosphorus from an RF plasma into a porous-silicon film intended to serve as a source for the next diffusion step, the film being made by plasma etching or electrolytic anodization. The ultimate goal is to reduce the wafer temperature. It is shown that much lower temperatures are indeed possible with the diffusion technique considered. It is established that doping concentration is more uniform over the wafer surface if pores are arranged regularly, as with porous silicon produced by plasma etching. It is also established that plasma-assisted diffusion is mainly affected by the dispersion of pores in size, total pressure, the partial pressure of the doping agent (AsH3 or PH3), RF power, and wafer temperature. Porous-silicon films doped with As or P by plasma-assisted diffusion could be employed in power devices.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 18, 2004

References

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