PL and ESR of Gd3+ in LaMgAl11O19 phosphors

PL and ESR of Gd3+ in LaMgAl11O19 phosphors LaMgAl11O19 doped with different concentrations of gadolinium phosphors were synthesized by combustion and characterized using X-Ray diffraction to identify the crystalline phase. Photoluminescence studies on the sample showed emission peaks at 313 and 306 nm with λexi = 273 nm corresponding to the 6P J → 8S7/2 transitions of Gd3+ ions. In phosphors with low dopant concentrations, dominant electron spin resonance lines are observed with g eff ~ 1.96, 1.98, 4.2, and 6.0. With increasing concentrations, the spectrum appears to be U-shaped, and main lines are seen at g eff ~ 1.98, 2.04, 2.8, 4.1 and 6.2. Distortions in the immediate environment of Gd3+ ions lead to relatively strong crystal fields and the appearance of lines in the low field region of the spectrum. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals
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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8414-0
Publisher site
See Article on Publisher Site

Abstract

LaMgAl11O19 doped with different concentrations of gadolinium phosphors were synthesized by combustion and characterized using X-Ray diffraction to identify the crystalline phase. Photoluminescence studies on the sample showed emission peaks at 313 and 306 nm with λexi = 273 nm corresponding to the 6P J → 8S7/2 transitions of Gd3+ ions. In phosphors with low dopant concentrations, dominant electron spin resonance lines are observed with g eff ~ 1.96, 1.98, 4.2, and 6.0. With increasing concentrations, the spectrum appears to be U-shaped, and main lines are seen at g eff ~ 1.98, 2.04, 2.8, 4.1 and 6.2. Distortions in the immediate environment of Gd3+ ions lead to relatively strong crystal fields and the appearance of lines in the low field region of the spectrum.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Dec 15, 2017

References

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