Physicochemical processes accompanying the heating of pitch and pitch—ethyl silicate mixtures

Physicochemical processes accompanying the heating of pitch and pitch—ethyl silicate mixtures The problem of intensification of the synthesis of silicon carbide from pitch—ethyl silicate mixtures is considered. The physicochemical processes occurring in mixtures of pitch with nonhydrolyzed ethyl silicate and ethylsilicate binder thermally treated in air were studied by methods of differential thermal analysis and x-ray diffraction. The onset of SiC synthesis was observed at 1273 K. The yield of SiC increased upon formation of a silicon melt providing the maximum area of contact between carbon particles and ultradisperse silica. A self-organization takes place in the system that favors the formation of a layered material with SiC occurring predominantly in the form of whiskers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Refractories and Industrial Ceramics Springer Journals

Physicochemical processes accompanying the heating of pitch and pitch—ethyl silicate mixtures

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Publisher
Springer US
Copyright
Copyright © 1997 by Plenum Publishing Corporation
Subject
Chemistry; Characterization and Evaluation of Materials; Materials Science; Ceramics, Glass, Composites, Natural Methods
ISSN
1083-4877
eISSN
1573-9139
D.O.I.
10.1007/BF02767925
Publisher site
See Article on Publisher Site

Abstract

The problem of intensification of the synthesis of silicon carbide from pitch—ethyl silicate mixtures is considered. The physicochemical processes occurring in mixtures of pitch with nonhydrolyzed ethyl silicate and ethylsilicate binder thermally treated in air were studied by methods of differential thermal analysis and x-ray diffraction. The onset of SiC synthesis was observed at 1273 K. The yield of SiC increased upon formation of a silicon melt providing the maximum area of contact between carbon particles and ultradisperse silica. A self-organization takes place in the system that favors the formation of a layered material with SiC occurring predominantly in the form of whiskers.

Journal

Refractories and Industrial CeramicsSpringer Journals

Published: Nov 26, 2007

References

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