Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Elements, and Circuits: A Linear Model

Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor... The physical principles are considered of laser–matter interaction in the semiconductor regions of microelectronic structures. It is demonstrated that laser irradiation represents an efficient method for simulating the transient response to pulsed high-energy ionizing radiation. In a linear approximation, computational formulae are derived for the depth profile of equivalent dose rate for front- and back-side laser illumination, subject to optical absorption, multiple reflections, and doping level. Formulae are presented by which to compute equivalent dose rate for standard silicon chips. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Elements, and Circuits: A Linear Model

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000018711.96346.1d
Publisher site
See Article on Publisher Site

Abstract

The physical principles are considered of laser–matter interaction in the semiconductor regions of microelectronic structures. It is demonstrated that laser irradiation represents an efficient method for simulating the transient response to pulsed high-energy ionizing radiation. In a linear approximation, computational formulae are derived for the depth profile of equivalent dose rate for front- and back-side laser illumination, subject to optical absorption, multiple reflections, and doping level. Formulae are presented by which to compute equivalent dose rate for standard silicon chips.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 18, 2004

References

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