The physical principles are considered of laser–matter interaction in the semiconductor regions of microelectronic structures. It is demonstrated that laser irradiation represents an efficient method for simulating the transient response to pulsed high-energy ionizing radiation. In a linear approximation, computational formulae are derived for the depth profile of equivalent dose rate for front- and back-side laser illumination, subject to optical absorption, multiple reflections, and doping level. Formulae are presented by which to compute equivalent dose rate for standard silicon chips.
Russian Microelectronics – Springer Journals
Published: Oct 18, 2004
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