The nonlinear interaction of Nd-laser radiation and silicon devices and ICs is discussed. It is shown that calculation of equivalent dose rate for laser intensities above 106 W cm−2 must take into account the variation of the linear absorption coefficient with excess-carrier density and the influence of Auger recombination on the carrier lifetime. It is established that accurate simulation of the transient response to intense irradiation requires simultaneous solution of the basic and optical-propagation equations written in at least two dimensions. A description is given of DIODE-2D, a program for 2D computer simulation of transient radiation response for semiconductor devices and ICs over wide ranges of dose rates and laser intensities. Computed equivalent dose rates are presented for silicon devices and ICs exposed to high-intensity laser radiation.
Russian Microelectronics – Springer Journals
Published: Apr 22, 2006
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud