Photosensitive heterostructures based on porous nanocrystalline silicon

Photosensitive heterostructures based on porous nanocrystalline silicon The features of the manufacturing process, as well as the results of studies on the morphology, electrophysical, and photoelectric properties of photosensitive structures based on silicon containing siliconcarbide and porous silicon layers, are considered. A porous layer is created on the surface of a monocrystalline silicon substrate via electrolytic etching in fluorine-containing solutions. Wafers with a different surface microrelief such as a ground, polished, and textured one, has been used. The carbonization of the samples resulting in the formation of SiC/Si heterostructures has been carried out via gas transport endotaxy in a hydrogen flow using a vertical reactor with cold walls and a graphite container. The structure and composition of the manufactured SiC/Si heterostructures formed on different types of structured surfaces on polycrystalline and monocrystalline silicon, including the surface porous silicon layer, are investigated. It is shown that the process of endotaxy on all the types of surfaces leads to the formation of a single-crystal phase of silicon carbide by cubic modification. Using scanning and transmission electron microscopy, the morphology of the produced structures is investigated. Filiform entities with a different structure have been revealed on nonporous surfaces identified as silicon carbide, whereas the cylindrical or conical structures, whose nature is uncertain, have been observed on porous surfaces. The current-voltage and current-power curves are plotted for all types of manufactured structures, the general form of which indicates the presence of several potential barriers there. The photoelectric properties of the structures and the prospects of their use in photoelectric converters of solar cells are analyzed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Photosensitive heterostructures based on porous nanocrystalline silicon

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716080084
Publisher site
See Article on Publisher Site

Abstract

The features of the manufacturing process, as well as the results of studies on the morphology, electrophysical, and photoelectric properties of photosensitive structures based on silicon containing siliconcarbide and porous silicon layers, are considered. A porous layer is created on the surface of a monocrystalline silicon substrate via electrolytic etching in fluorine-containing solutions. Wafers with a different surface microrelief such as a ground, polished, and textured one, has been used. The carbonization of the samples resulting in the formation of SiC/Si heterostructures has been carried out via gas transport endotaxy in a hydrogen flow using a vertical reactor with cold walls and a graphite container. The structure and composition of the manufactured SiC/Si heterostructures formed on different types of structured surfaces on polycrystalline and monocrystalline silicon, including the surface porous silicon layer, are investigated. It is shown that the process of endotaxy on all the types of surfaces leads to the formation of a single-crystal phase of silicon carbide by cubic modification. Using scanning and transmission electron microscopy, the morphology of the produced structures is investigated. Filiform entities with a different structure have been revealed on nonporous surfaces identified as silicon carbide, whereas the cylindrical or conical structures, whose nature is uncertain, have been observed on porous surfaces. The current-voltage and current-power curves are plotted for all types of manufactured structures, the general form of which indicates the presence of several potential barriers there. The photoelectric properties of the structures and the prospects of their use in photoelectric converters of solar cells are analyzed.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 8, 2017

References

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