A novel method of noncontact and nondestructive characterization by photoreflectance spectroscopy is validated on bulk and epitaxial GaAs single crystals with different levels of doping. The method is used to simultaneously determine the surface electric field and free-carrier concentration. Close agreement is observed between photoreflectance-spectroscopy and Hall-effect measurements.
Russian Microelectronics – Springer Journals
Published: Nov 17, 2012
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