The UV photoelectrochemical oxidation of ZnO films in water at room temperature is evaluated experimentally as a method for altering the optical and electrical properties of the films by introducing excess oxygen into native defects as compared with stoichiometry. The variation is examined of photoluminescence spectrum and resistivity with oxidation time subject to applied voltage. It is revealed that the oxidation decreases the density of VOand IZndonor defects and increases that of VZnacceptor defects. It is found that oxidation rate grows with applied voltage.
Russian Microelectronics – Springer Journals
Published: Oct 18, 2004
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