Surface-diffusion reactions between a Ta–Ni–N alloy and a Si(100) substrate are studied experimentally. It is shown that a Ta x Si y N/NiSi2bilayer can be produced on the substrate by simultaneous electron-beam evaporation of tantalum and nickel in a nitrogen atmosphere, the substrate being heated to about 800°C. The formation of the NiSi2 phase is examined.
Russian Microelectronics – Springer Journals
Published: Oct 11, 2004
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