Phase Formation in a Ta–Ni–N Thin Film during Its Electron-Beam Evaporation Deposition on a Heated Si(100) Substrate

Phase Formation in a Ta–Ni–N Thin Film during Its Electron-Beam Evaporation Deposition on a... Surface-diffusion reactions between a Ta–Ni–N alloy and a Si(100) substrate are studied experimentally. It is shown that a Ta x Si y N/NiSi2bilayer can be produced on the substrate by simultaneous electron-beam evaporation of tantalum and nickel in a nitrogen atmosphere, the substrate being heated to about 800°C. The formation of the NiSi2 phase is examined. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Phase Formation in a Ta–Ni–N Thin Film during Its Electron-Beam Evaporation Deposition on a Heated Si(100) Substrate

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1025513700102
Publisher site
See Article on Publisher Site

Abstract

Surface-diffusion reactions between a Ta–Ni–N alloy and a Si(100) substrate are studied experimentally. It is shown that a Ta x Si y N/NiSi2bilayer can be produced on the substrate by simultaneous electron-beam evaporation of tantalum and nickel in a nitrogen atmosphere, the substrate being heated to about 800°C. The formation of the NiSi2 phase is examined.

Journal

Russian Microelectronics – Springer Journals

Published: Oct 11, 2004

References

  • Silicides for Integrated Circuits: TiSi2 and CoSi2
    Maex, K.
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    Corcoran, Y.L.; King, A.H.; de Lanerolle, N.; Kim, B.
  • CoSi2: An Attractive Alternative to TiSi2
    Maex, K.
  • NiSi Salicide Technology for Scaled CMOS
    Iwai, H.; Ohguro, T.; Ohmi, S.
  • A Note on Solid-State Reaction Kinetics: The Formation of Silicides from Thin Films of Metallic Alloys
    d'Heurle, F.M.
  • Silicides Formation for Refractory Metal Alloys (Ta-V and Ti-V) on Si
    Appelbaum, E.; Eizenberg, M.
  • NiSi Formaion at the Silicide/Si Interface on the NiPt/Si System
    Ottaviani, G.; Tu, K.N.; Chu, W.K.; Hung, K.S.; Mayer, J.W.
  • Phase Transformations of Alloys on a Reactive Substrate: Interaction of Binary Alloys of Transition and Rare-Earth Metals with Silicon
    Thompson, R.D.; Tu, K.N.; Ottaviani, G.
  • Phase Formation during the Surface-Diffusion Growth of Ti-Co-Si-N and Ti-Co-N Thin Films on Si and SiO2
    Vasiliev, A.G.; Zakharov, R.A.; Rodatis, V.V.; Lobintsov, A.V.; Orlikovskii, A.A.; Horin, I.A.
  • Structural and Chemical Stability of Ta-Si-N Thin Film between Si and Cu
    Lee, Y.J.; Suh, B.-S.; Rha, S.-K.; Park, C.-O.
  • Study of Ta-Si-N Thin Films for Use as Barrier Layer in Copper Metallizations
    Fische, D.; Scherg, T.; Bauer, J.G.; Schulze, H.-J.; Wenzel, C.
  • Surface Diffusion of Ni on Si(111) during the Simultaneous Adsorption of Ni and Co
    Dolbak, A.E.; Ol'shanetskii, B.Z.; Tiis, S.A.; Zhakuch, R.A.
  • In Situ Transmission Electron Microscopy Study of Ni Silicide Phases Formed on (001) Si Active Lines
    Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; Van Landuyt, J.
  • Reactive Epitaxy of Cobalt Disilicide on Si(100)
    Gomoyunova, M.V.; Pronin, I.I.; Valdaitsev, D.A.; Faradzhev, N.S.

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