The kinetics of phase formation in Ti–Co–Si–N and Ti–Co–N thin films on Si and SiO2is investigated experimentally. With the deposition on Si, rapid thermal annealing (T∼ 900°C) is shown to cause phase separation that ends in a TiN/CoSi2/Si structure. If SiO2is used, the alloy reacts with the substrate to produce compounds that are difficult to remove with selective etchants. This limits the potential uses of this process in the fabrication of contact systems for CMOS devices. It is shown that structure- and phase-dissimilar films can be formed on Si and SiO2by means of the surface-diffusion reactions between a Ti–Co–Si–N or Ti–Co–N alloy and the substrate at 650–700°C. The effect of a TiN, Ti, or CoSi2thin layer at the alloy–substrate interface on the phase separation is investigated.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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