Phase Formation during the Surface-Diffusion Growth of Ti–Co–Si–N and Ti–Co–N Thin Films on Si and SiO2

Phase Formation during the Surface-Diffusion Growth of Ti–Co–Si–N and Ti–Co–N Thin... The kinetics of phase formation in Ti–Co–Si–N and Ti–Co–N thin films on Si and SiO2is investigated experimentally. With the deposition on Si, rapid thermal annealing (T∼ 900°C) is shown to cause phase separation that ends in a TiN/CoSi2/Si structure. If SiO2is used, the alloy reacts with the substrate to produce compounds that are difficult to remove with selective etchants. This limits the potential uses of this process in the fabrication of contact systems for CMOS devices. It is shown that structure- and phase-dissimilar films can be formed on Si and SiO2by means of the surface-diffusion reactions between a Ti–Co–Si–N or Ti–Co–N alloy and the substrate at 650–700°C. The effect of a TiN, Ti, or CoSi2thin layer at the alloy–substrate interface on the phase separation is investigated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Phase Formation during the Surface-Diffusion Growth of Ti–Co–Si–N and Ti–Co–N Thin Films on Si and SiO2

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011936611230
Publisher site
See Article on Publisher Site

Abstract

The kinetics of phase formation in Ti–Co–Si–N and Ti–Co–N thin films on Si and SiO2is investigated experimentally. With the deposition on Si, rapid thermal annealing (T∼ 900°C) is shown to cause phase separation that ends in a TiN/CoSi2/Si structure. If SiO2is used, the alloy reacts with the substrate to produce compounds that are difficult to remove with selective etchants. This limits the potential uses of this process in the fabrication of contact systems for CMOS devices. It is shown that structure- and phase-dissimilar films can be formed on Si and SiO2by means of the surface-diffusion reactions between a Ti–Co–Si–N or Ti–Co–N alloy and the substrate at 650–700°C. The effect of a TiN, Ti, or CoSi2thin layer at the alloy–substrate interface on the phase separation is investigated.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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