An experiment is carried out to evaluate phase detection as a method for the optical-emission monitoring of SiO2/Si fluorine-plasma etching, the driving frequency serving as the reference frequency. It is shown that the output signal-to-noise ratio can thus be increased several times, so that the minimum percentage etch area for which endpoint detection is possible will be reduced from 2.1 to 0.4%. It is concluded that the new method may be practical in the etching of small windows.
Russian Microelectronics – Springer Journals
Published: Oct 11, 2004
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