Phase Detection Used in the Optical-Emission Monitoring of SiO2/Si Plasma Etching

Phase Detection Used in the Optical-Emission Monitoring of SiO2/Si Plasma Etching An experiment is carried out to evaluate phase detection as a method for the optical-emission monitoring of SiO2/Si fluorine-plasma etching, the driving frequency serving as the reference frequency. It is shown that the output signal-to-noise ratio can thus be increased several times, so that the minimum percentage etch area for which endpoint detection is possible will be reduced from 2.1 to 0.4%. It is concluded that the new method may be practical in the etching of small windows. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Phase Detection Used in the Optical-Emission Monitoring of SiO2/Si Plasma Etching

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1024519330819
Publisher site
See Article on Publisher Site

Abstract

An experiment is carried out to evaluate phase detection as a method for the optical-emission monitoring of SiO2/Si fluorine-plasma etching, the driving frequency serving as the reference frequency. It is shown that the output signal-to-noise ratio can thus be increased several times, so that the minimum percentage etch area for which endpoint detection is possible will be reduced from 2.1 to 0.4%. It is concluded that the new method may be practical in the etching of small windows.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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