Liquid-phase epitaxy is used to fabricate Pb0.8Sn0.2Te films, undoped or doped with indium to different levels. The depth profiles of the carrier density and dopant concentration in the films are measured and examined. A uniform dopant concentration to a depth of 15 μm is obtained. Electrical-conduction inversion is observed at a temperature of 77.3 K as the doping level is varied. The liquid-phase epitaxial method is shown to be a more suitable technology for the reproducible manufacture of epitaxial films with a given carrier density, such as the ones used in terahertz detectors.
Russian Microelectronics – Springer Journals
Published: Dec 9, 2011
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