Access the full text.
Sign up today, get DeepDyve free for 14 days.
Tadayui Takahashi, Shin Watanabe (2001)
Recent progress in CdTe and CdZnTe detectorsIEEE Transactions on Nuclear Science, 48
J. Zázvorka, J. Franc, M. Statelov, J. Pekárek, M. Veis, P. Moravec, K. Mašek (2016)
Optical and electrical study of CdZnTe surfaces passivated by KOH and NH 4 F solutionsApplied Surface Science, 389
Yunpeng Ling, J. Min, Xiaoyan Liang, Jijun Zhang, Liuqing Yang, Ying Zhang, Ming Li, Zhaoxin Liu, Linjun Wang (2017)
Carrier transport performance of Cd0.9Zn0.1Te detector by direct current photoconductive technologyJournal of Applied Physics, 121
Xiaobin Xing, J. Min, X. Liang, Jijun Zhang, Linjun Wang, Liuqing Yang, Yunpeng Ling, Lei Duan, Yue Shen (2015)
Investigation of structural defects in In-doped CdZnTe under different in-situ annealing cooling ratesJournal of Crystal Growth, 426
C. Szeles (2004)
CdZnTe and CdTe materials for X‐ray and gamma ray radiation detector applicationsphysica status solidi (b), 241
Wen-bin Sang, J. Ju, W. Shi, Y. Qian, Wang Linjun, Yiben Xia, Wenhai Wu, Jiaxiong Fang, Yanjin Li, Jun Zhao, H. Gong (2000)
Comparison of physical passivation of Hg1−xCdxTeJournal of Crystal Growth
K. Chattopadhyay, M. Hayes, Jean-Olivier Ndap, A. Burger, W. Lu, H. McWhinney, T. Grady, R. James (2000)
Surface passivation of cadmium zinc telluride radiation detectors by potassium hydroxide solutionJournal of Electronic Materials, 29
J. Pekárek, E. Belas, J. Zázvorka (2017)
Long-Term Stable Surface Treatments on CdTe and CdZnTe Radiation DetectorsJournal of Electronic Materials, 46
(1999)
Condens
M. Mescher, T. Schlesinger, J. Toney, B. Brunett, R. James (1999)
Development of dry processing techniques for CdZnTe surface passivationJournal of Electronic Materials, 28
A. Rybka, S. Leonov, I. Prokhoretz, A. Abyzov, L. Davydov, V. Kutny, M. Rowland, Craig Smith (2001)
Influence of detector surface processing on detector performanceNuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 458
M. Duff, D. Hunter, A. Burger, M. Groza, V. Buliga, D. Black (2008)
Effect of surface preparation technique on the radiation detector performance of CdZnTeApplied Surface Science, 254
(1996)
AFM images of DLC film with the following thicknesses
Yimin Fan, J. Ju, Weili Zhang, Yiben Xia, Zhiming Wang, Zhijun Fang, Linjun Wang (2001)
A new passivation method for porous siliconSolid State Communications, 120
T. Prettyman, M. Hoffbauer, J. Rennie, S. Cook, J. Gregory, M. George, P. Luke, M. Amman, S. Soldner, J. Earnhart (1998)
Performance of CdZnTe detectors passivated with energetic oxygen atomsNuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 422
Henry Chen, J. Tong, Zhiyu Hu, D. Shi, G. Wu, Kuo-Tong Chen, M. George, W. Collins, A. Burger, R. James, C. Stahle, L. Bartlett (1996)
Low‐temperature photoluminescence of detector grade Cd1−xZnxTe crystal treated by different chemical etchantsJournal of Applied Physics, 80
Kuo-Tong Chen, D. Shi, Henry Chen, B. Granderson, M. George, W. Collins, A. Burger, R. James (1997)
Study of oxidized cadmium zinc telluride surfacesJournal of Vacuum Science and Technology, 15
Leakage currents of a CdZnTe (CZT) detector are desired to be as low as possible for a better signal-to-noise ratio in the acquisition of x-ray/gamma-ray spectra. Surface passivation plays a major role in reduction of the surface leakage current and thereby improves the detector performance. In this paper, diamond-like carbon (DLC) film has been introduced as the passivation layer for a CZT detector. Passivation effect and stability of the DLC film on CZT devices have been investigated by the Raman spectrum, x-ray photoelectron spectroscopy (XPS), atomicforce microscopy (AFM) and current–voltage characteristic. High-quality DLC films were effectively fabricated on CZT devices measured by the Raman spectrum. The XPS in-depth profiling of CZT passivated with DLC film demonstrated that no interface reaction occurred, and DLC effectively prevented the oxidation reaction to produce the state Te4+ in Te3d spectra. Moreover, the surface leakage current evidently dropped after the DLC film passivation. In addition, properties of the DLC films with different thickness were investigated. It was shown that the effect of this passivation over stability with time is not perfect and an optimum thickness of the DLC film is proposed for reaching the best stability for CZT devices.
Journal of Electronic Materials – Springer Journals
Published: May 31, 2018
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.