Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage

Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using... The works on the partitioning of very hard semiconductor sapphire wafers with a diameter of 52 mm and thickness of 90 μm into monolithic integrated circuits (MICs) have been carried out using lasercontrolled thermal cleavage (LCT). The studies have been carried out and the works on cutting polycrystalline diamond wafers have been performed, as a result of which a method to partition the wafers into crystals, i.e., the laser plasmochemical method of cutting, is proposed, the basic advantage of which is the absence of the material bursting out from the cutting region and its deposition onto already formed device structures. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage

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Publisher
Pleiades Publishing
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739717030076
Publisher site
See Article on Publisher Site

Abstract

The works on the partitioning of very hard semiconductor sapphire wafers with a diameter of 52 mm and thickness of 90 μm into monolithic integrated circuits (MICs) have been carried out using lasercontrolled thermal cleavage (LCT). The studies have been carried out and the works on cutting polycrystalline diamond wafers have been performed, as a result of which a method to partition the wafers into crystals, i.e., the laser plasmochemical method of cutting, is proposed, the basic advantage of which is the absence of the material bursting out from the cutting region and its deposition onto already formed device structures.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jun 2, 2017

References

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