Parameters of plasma and mechanisms of etching of metals and semiconductors in HCl + Ar, H2, O2, and Cl2 mixtures

Parameters of plasma and mechanisms of etching of metals and semiconductors in HCl + Ar, H2, O2,... A comparative study of the effect of the initial composition of the HCl + Ar, H2, O2, and Cl2 binary mixtures on the steady-state physical parameters and composition of direct-current glow-discharge plasma was carried out. Information on the reduced electric field intensity, average energy and concentration of electrons, concentrations and densities of fluxes of atoms and ions were obtained. A simulation analysis of the effect of the initial composition of mixtures on the kinetics of the interaction between reactive species of plasma and the surface in the ion-stimulated chemical reaction mode is carried out. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Parameters of plasma and mechanisms of etching of metals and semiconductors in HCl + Ar, H2, O2, and Cl2 mixtures

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715040046
Publisher site
See Article on Publisher Site

Abstract

A comparative study of the effect of the initial composition of the HCl + Ar, H2, O2, and Cl2 binary mixtures on the steady-state physical parameters and composition of direct-current glow-discharge plasma was carried out. Information on the reduced electric field intensity, average energy and concentration of electrons, concentrations and densities of fluxes of atoms and ions were obtained. A simulation analysis of the effect of the initial composition of mixtures on the kinetics of the interaction between reactive species of plasma and the surface in the ion-stimulated chemical reaction mode is carried out.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 2, 2015

References

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