Oscillations in Ballistic FETs

Oscillations in Ballistic FETs Oscillation processes in V-shaped-gate GaAs MESFETs with the effective channel length 30 nm is discussed. The transistors were made by electron lithography and anisotropic etching to shape the gate. The analytic transit time of electrons along the channel was found to be less than 0.1 ps. The oscillation frequency varied from 30 to 37 GHz. It is shown that a decrease in the gate–source capacitance affects the oscillating signal only slightly. Unlike Gunn diodes, neutron irradiation has an insignificant effect on the signal up to fluences of 1015 cm–2. The exposure to IR radiation may change the signal amplitude twofold, with the oscillation frequency being changed by less than 0.1%. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Oscillations in Ballistic FETs

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1009457405578
Publisher site
See Article on Publisher Site

Abstract

Oscillation processes in V-shaped-gate GaAs MESFETs with the effective channel length 30 nm is discussed. The transistors were made by electron lithography and anisotropic etching to shape the gate. The analytic transit time of electrons along the channel was found to be less than 0.1 ps. The oscillation frequency varied from 30 to 37 GHz. It is shown that a decrease in the gate–source capacitance affects the oscillating signal only slightly. Unlike Gunn diodes, neutron irradiation has an insignificant effect on the signal up to fluences of 1015 cm–2. The exposure to IR radiation may change the signal amplitude twofold, with the oscillation frequency being changed by less than 0.1%.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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