Oscillating transient currents in PbSnTe:In in a backgroundless mode

Oscillating transient currents in PbSnTe:In in a backgroundless mode Damping oscillations of a current are found in the PbSTe:In films after supplying a direct voltage to them in the absence of background illumination. A nonmonotonic transition to the steady state is discussed in the scope of the theory of the currents confined by a space charge upon the capture of electrons injected from the contacts to the traps distributed by energy, which leads to oscillating variation in polarizability and injection current. The ratio of the total current under the excitation by laser radiation with wavelength λ = 205 μm (hν = 0.006 eV) to the dark current could be larger or smaller than unity depending on the injection level of the electrons, i.e., supplied voltage, which can be interpreted in the scope of the suggested model. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Oscillating transient currents in PbSnTe:In in a backgroundless mode

Loading next page...
 
/lp/springer_journal/oscillating-transient-currents-in-pbsnte-in-in-a-backgroundless-mode-72L40ScSFS
Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711020028
Publisher site
See Article on Publisher Site

Abstract

Damping oscillations of a current are found in the PbSTe:In films after supplying a direct voltage to them in the absence of background illumination. A nonmonotonic transition to the steady state is discussed in the scope of the theory of the currents confined by a space charge upon the capture of electrons injected from the contacts to the traps distributed by energy, which leads to oscillating variation in polarizability and injection current. The ratio of the total current under the excitation by laser radiation with wavelength λ = 205 μm (hν = 0.006 eV) to the dark current could be larger or smaller than unity depending on the injection level of the electrons, i.e., supplied voltage, which can be interpreted in the scope of the suggested model.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 30, 2011

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from Google Scholar, PubMed
Create lists to organize your research
Export lists, citations
Access to DeepDyve database
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off