Optoelectronics properties of TiO
:Cu thin ﬁlms
obtained by sol gel method
Received: 15 June 2017 / Accepted: 10 August 2017
Ó Springer Science+Business Media, LLC 2017
Abstract In this research, Cu-doped TiO
thin ﬁlms have been successfully deposited onto
a glass substrate by Sol–gel technique using dip coating method. The ﬁlms were annealed
at different annealing temperatures (400–500 °C) for 1 h. The structural, optical and
electrical properties of the ﬁlms were investigated and compared using X-ray Diffraction,
UV–visible spectrophotometer and 4-point probe method. Optical analysis by mean
transmittance T(k) and absorption A(k) measurements in the wavelength range between
300 to 800 nm allow us to determine the indirect band gap energy. DRX analysis of our
thin ﬁlms of TiO
:Cu shows that the intensities of the line characteristic of anatase phase
increasing in function of the temperature.
Keywords Cu-doped TiO
Á Anatase Á Dip coating Á Optical properties
Titanium dioxide is still investigated widely by a large number of researchers due to its
good mechanical, thermal, chemical, electrical and optical properties.
is widely used in wide range of technological applications, we cite: dye-sensitized
photocatalysts (Huang et al. 2014), wet-type solar cells (Michael 2001), gas sensor (Lyson-
Sypien et al. 2013), electrochromic systems (Tachibana et al. 2000), electronic material (Li
et al. 2003), antireﬂection coating (Jayasinghe and Perera 2012).
is a high band gap semiconductor that is transparent to visible light, it has
excellent optical transmittance and a high refractive index.
& Zineb Essalhi
FSTM Hassan II Casablanca University, Mohammedia, Morocco
FSTBM Sultan Moulay Sliman University, Beni Mellal, Morocco
University Politecnica, Valencia, Spain
University of Lorraine, Metz, France
Opt Quant Electron (2017) 49:301