Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method

Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method In this research, Cu-doped TiO2 thin films have been successfully deposited onto a glass substrate by Sol–gel technique using dip coating method. The films were annealed at different annealing temperatures (400–500 °C) for 1 h. The structural, optical and electrical properties of the films were investigated and compared using X-ray Diffraction, UV–visible spectrophotometer and 4-point probe method. Optical analysis by mean transmittance T(λ) and absorption A(λ) measurements in the wavelength range between 300 to 800 nm allow us to determine the indirect band gap energy. DRX analysis of our thin films of TiO2:Cu shows that the intensities of the line characteristic of anatase phase increasing in function of the temperature. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Optical and Quantum Electronics Springer Journals

Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Physics; Optics, Lasers, Photonics, Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks
ISSN
0306-8919
eISSN
1572-817X
D.O.I.
10.1007/s11082-017-1142-0
Publisher site
See Article on Publisher Site

Abstract

In this research, Cu-doped TiO2 thin films have been successfully deposited onto a glass substrate by Sol–gel technique using dip coating method. The films were annealed at different annealing temperatures (400–500 °C) for 1 h. The structural, optical and electrical properties of the films were investigated and compared using X-ray Diffraction, UV–visible spectrophotometer and 4-point probe method. Optical analysis by mean transmittance T(λ) and absorption A(λ) measurements in the wavelength range between 300 to 800 nm allow us to determine the indirect band gap energy. DRX analysis of our thin films of TiO2:Cu shows that the intensities of the line characteristic of anatase phase increasing in function of the temperature.

Journal

Optical and Quantum ElectronicsSpringer Journals

Published: Aug 18, 2017

References

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