Optimization of technological parameters in plasma chemical etching of quartz single crystals

Optimization of technological parameters in plasma chemical etching of quartz single crystals Main technological parameters of the process of local plasmochemical etching of single-crystal quartz were optimized. The etching was performed in a gas mixture of CF4 and H2 under radio frequency (RF, 13.56 MHz) discharge excitation. The scientific experiment design by the Taguchi matrix method was used to examine the effect of chamber pressure, RF generator power, negative bias applied to the substrate holder, and hydrogen flow rate on the rate of the etching process. The experimental results made it possible to evaluate for the first time the influence exerted by the technological parameters on the etching rate. It was shown that the influence exerted by the technological parameters in the conditions under study decreases in the following order: pressure in the reaction chamber, bias potential, RF power, hydrogen flow rate. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Journal of Applied Chemistry Springer Journals

Optimization of technological parameters in plasma chemical etching of quartz single crystals

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Chemistry; Chemistry/Food Science, general; Industrial Chemistry/Chemical Engineering
ISSN
1070-4272
eISSN
1608-3296
D.O.I.
10.1134/S1070427216060033
Publisher site
See Article on Publisher Site

Abstract

Main technological parameters of the process of local plasmochemical etching of single-crystal quartz were optimized. The etching was performed in a gas mixture of CF4 and H2 under radio frequency (RF, 13.56 MHz) discharge excitation. The scientific experiment design by the Taguchi matrix method was used to examine the effect of chamber pressure, RF generator power, negative bias applied to the substrate holder, and hydrogen flow rate on the rate of the etching process. The experimental results made it possible to evaluate for the first time the influence exerted by the technological parameters on the etching rate. It was shown that the influence exerted by the technological parameters in the conditions under study decreases in the following order: pressure in the reaction chamber, bias potential, RF power, hydrogen flow rate.

Journal

Russian Journal of Applied ChemistrySpringer Journals

Published: Sep 28, 2016

References

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