Optimization of laser irradiation parameters for simulation of a transient radiation response in thin-film silicon-based microcircuits

Optimization of laser irradiation parameters for simulation of a transient radiation response in... A method for improving the efficiency of using laser radiation (LR) energy is discussed to implement high levels of dose rates by reducing the radiation wavelength. Generally, the optimal range of LR energy for the simulation of the transient radiation response in CMOS SOS/SOI microcircuits depends on the technological characteristics of production and ranges from 0.9 to 0.75 μm. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Optimization of laser irradiation parameters for simulation of a transient radiation response in thin-film silicon-based microcircuits

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715010084
Publisher site
See Article on Publisher Site

Abstract

A method for improving the efficiency of using laser radiation (LR) energy is discussed to implement high levels of dose rates by reducing the radiation wavelength. Generally, the optimal range of LR energy for the simulation of the transient radiation response in CMOS SOS/SOI microcircuits depends on the technological characteristics of production and ranges from 0.9 to 0.75 μm.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 7, 2015

References

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