Optical monitoring of substrate temperature and etching speed of multilayered structures during plasmochemical etching

Optical monitoring of substrate temperature and etching speed of multilayered structures during... Using weakly coherent tandem interferometry, the possibility of simultaneous temperature and film thickness measurements in plasmochemical etching processes of silicon on insulator structure is demonstrated. It is shown that changes of the structure’s total optical thickness related to temperature variation can be separated from a change of the physical film thickness. For that purpose we have to take in account changes of zeros interference peak amplitude caused by changes of the interferentional conditions inside the film when its thickness is changing. Temperature measurement precision is ±1°C. Thickness measurement precision is ±10 nm. The results of process monitoring closely correlate with the results of a stair’s profile obtained with a profilometer. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Optical monitoring of substrate temperature and etching speed of multilayered structures during plasmochemical etching

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Publisher
Springer Journals
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711050106
Publisher site
See Article on Publisher Site

Abstract

Using weakly coherent tandem interferometry, the possibility of simultaneous temperature and film thickness measurements in plasmochemical etching processes of silicon on insulator structure is demonstrated. It is shown that changes of the structure’s total optical thickness related to temperature variation can be separated from a change of the physical film thickness. For that purpose we have to take in account changes of zeros interference peak amplitude caused by changes of the interferentional conditions inside the film when its thickness is changing. Temperature measurement precision is ±1°C. Thickness measurement precision is ±10 nm. The results of process monitoring closely correlate with the results of a stair’s profile obtained with a profilometer.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 30, 2011

References

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