Optical, magnetic, and photoelectrochemical properties of electrochemically deposited Eu3+-doped ZnSe thin films

Optical, magnetic, and photoelectrochemical properties of electrochemically deposited Eu3+-doped... The various mole percent (1–5%) of Eu3+-doped ZnSe thin films were fabricated on the indium-doped tin oxide (ITO) conducting glass substrate by single-step electrochemical deposition (ECD) process in an aqueous medium at 50 °C. The structural, optical, magnetic, and electrochemical properties were characterized as a function of the Eu3+ ion concentration. The X-ray diffraction (XRD) analyses evidenced that the films were hexagonal wurtzite structure along with the (101) preferential orientation. High-resolution scanning electron microscopy (HRSEM) results revealed that the thin films show a spherical like structure for 1–3% of Eu3+-doped ZnSe films. Further, increasing of Eu3+ concentration (4 and 5%), the surface morphology of thin films was observed as agglomerated grain-like structure. The band gap energy of Eu3+-doped ZnSe thin films (2.35 to 2.49 eV) determined by UV-Vis spectra showed a blue shift of absorption edge compared to the pure ZnSe thin film (2.33 eV). The increased band gap by doping of Eu3+ is due to the quantum size effect. The PL emission intensity enhanced by increasing Eu3+ concentration which revealed the enhanced radiative recombination in the luminescence process. The magnetic study revealed that Eu3+-doped ZnSe thin films were ferromagnetic in nature. Electrochemical impedance analysis indicated that 4% of Eu3+-doped ZnSe thin films showed a lower charge transfer resistance (352 Ω) and excellent properties compared to the other samples. Further, the photoelectrochemical measurements carried out for the optimized 4% Eu3+-doped ZnSe thin film revealed the faster migration of photoinduced charge carriers. The present investigation demonstrates that the electrochemically deposited Eu3+-doped ZnSe thin film is a promising candidate for electrochemical device applications. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Ionics Springer Journals

Optical, magnetic, and photoelectrochemical properties of electrochemically deposited Eu3+-doped ZnSe thin films

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Publisher
Springer Berlin Heidelberg
Copyright
Copyright © 2017 by Springer-Verlag Berlin Heidelberg
Subject
Chemistry; Electrochemistry; Renewable and Green Energy; Optical and Electronic Materials; Condensed Matter Physics; Energy Storage
ISSN
0947-7047
eISSN
1862-0760
D.O.I.
10.1007/s11581-017-2090-1
Publisher site
See Article on Publisher Site

Abstract

The various mole percent (1–5%) of Eu3+-doped ZnSe thin films were fabricated on the indium-doped tin oxide (ITO) conducting glass substrate by single-step electrochemical deposition (ECD) process in an aqueous medium at 50 °C. The structural, optical, magnetic, and electrochemical properties were characterized as a function of the Eu3+ ion concentration. The X-ray diffraction (XRD) analyses evidenced that the films were hexagonal wurtzite structure along with the (101) preferential orientation. High-resolution scanning electron microscopy (HRSEM) results revealed that the thin films show a spherical like structure for 1–3% of Eu3+-doped ZnSe films. Further, increasing of Eu3+ concentration (4 and 5%), the surface morphology of thin films was observed as agglomerated grain-like structure. The band gap energy of Eu3+-doped ZnSe thin films (2.35 to 2.49 eV) determined by UV-Vis spectra showed a blue shift of absorption edge compared to the pure ZnSe thin film (2.33 eV). The increased band gap by doping of Eu3+ is due to the quantum size effect. The PL emission intensity enhanced by increasing Eu3+ concentration which revealed the enhanced radiative recombination in the luminescence process. The magnetic study revealed that Eu3+-doped ZnSe thin films were ferromagnetic in nature. Electrochemical impedance analysis indicated that 4% of Eu3+-doped ZnSe thin films showed a lower charge transfer resistance (352 Ω) and excellent properties compared to the other samples. Further, the photoelectrochemical measurements carried out for the optimized 4% Eu3+-doped ZnSe thin film revealed the faster migration of photoinduced charge carriers. The present investigation demonstrates that the electrochemically deposited Eu3+-doped ZnSe thin film is a promising candidate for electrochemical device applications.

Journal

IonicsSpringer Journals

Published: Apr 10, 2017

References

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