Variations in the characteristics of the memory cells of submicron CMOS RAMs caused by changes in temperature were simulated and experimentally investigated in a wide temperature range of minus 50°C to +150°C. It was found that submicron VLSI circuits fabricated on the basis of the 0.35-μm bulk-CMOS technology with epitaxial layers and of the industrial 0.18-μm bulk-CMOS technology are, in the large, characterized by high maximum permissible temperatures. The simulation results were confirmed by the tests of submicron 0.35- and 0.18-μm CMOS RAMs based, respectively, on 6-transistor and 12-transistor memory cells with heavy-ion tolerant (HIT) and dual interlocked storage-cell (DICE) structures. The results of the investigation allow one to make a reasoned selection of memory cells to be used in practical embodiments of VLSI static RAMs intended to operate under extreme conditions
Russian Microelectronics – Springer Journals
Published: Jan 8, 2009
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