One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets

One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets Singe-event upsets (SEUs) caused by high-energy protons are considered. An analytical model is proposed to represent the dependence of SEU cross section on proton energy. The model is based on a simple mechanism of proton-induced nuclear reactions in silicon. A computer simulation is conducted by the model. The results are found to agree with previous experiments. They indicate that the model enables one to predict susceptibility to proton-induced SEUs on the basis of a single value of SEU cross section measured at a proton energy higher than 100 MeV. It is shown that the approach may also work for heavy ions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets

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Publisher
Springer Journals
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000018713.85907.5a
Publisher site
See Article on Publisher Site

Abstract

Singe-event upsets (SEUs) caused by high-energy protons are considered. An analytical model is proposed to represent the dependence of SEU cross section on proton energy. The model is based on a simple mechanism of proton-induced nuclear reactions in silicon. A computer simulation is conducted by the model. The results are found to agree with previous experiments. They indicate that the model enables one to predict susceptibility to proton-induced SEUs on the basis of a single value of SEU cross section measured at a proton energy higher than 100 MeV. It is shown that the approach may also work for heavy ions.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 18, 2004

References

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