A MOSFET operating in the moderate inversion region is important for low power applications. Though various models are available in the literature expressing the drain current characteristics for weak and strong inversion regions, the model equations for transistors operating in moderate inversion for short channel devices are absent. Moreover, the boundary conditions specifying weak, moderate and strong inversion regions are necessary to have a smooth transition from one region to another. In this paper, an $$\alpha $$ α power law based approximate model for strong, moderate and weak inversion region is proposed using mathematical series expansions. The results obtained are verified using industry standard BSIM4 and lies in between error range of 5–10 $$\%$$ % .
Journal of Computational Electronics – Springer Journals
Published: Nov 16, 2017
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