The refinement of the evaluation formula for an equivalent oxide thickness in the case of a multi-layer gate insulator is obtained, taking into account a polarity effect in the suboxide layer at the Si/high-K dielectric interface. Calculated semiclassically and associated with the polarization dipole mechanism, the correction is negative and does not exceed 6%.
Russian Microelectronics – Springer Journals
Published: Jan 15, 2011
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud