On the essence of the high photosensitivity of a-Si:H layered films

On the essence of the high photosensitivity of a-Si:H layered films It is established that layered a-Si:H films grown by cyclic deposition with by-layer annealing in hydrogen plasma are characterized by high photosensitivity, which, at room temperature, exceeds by more than an order of magnitude the photosensitivity of regular nondoped a-Si:H films grown by deposition in the plasma of an HF glowing discharge. The high photosensitivity is determined by small dark conductance and the high photoconductance of layered films in the range of room temperature. It is demonstrated that this can be stipulated by the existence of sensitizing levels, related with higher oxygen concentrations at layer’s interface and the low concentration of broken silicon bonds in the depth of layers with a more ordered structure. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

On the essence of the high photosensitivity of a-Si:H layered films

Loading next page...
 
/lp/springer_journal/on-the-essence-of-the-high-photosensitivity-of-a-si-h-layered-films-ZOwCsBA4VK
Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711080129
Publisher site
See Article on Publisher Site

Abstract

It is established that layered a-Si:H films grown by cyclic deposition with by-layer annealing in hydrogen plasma are characterized by high photosensitivity, which, at room temperature, exceeds by more than an order of magnitude the photosensitivity of regular nondoped a-Si:H films grown by deposition in the plasma of an HF glowing discharge. The high photosensitivity is determined by small dark conductance and the high photoconductance of layered films in the range of room temperature. It is demonstrated that this can be stipulated by the existence of sensitizing levels, related with higher oxygen concentrations at layer’s interface and the low concentration of broken silicon bonds in the depth of layers with a more ordered structure.

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 9, 2011

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

Monthly Plan

  • Read unlimited articles
  • Personalized recommendations
  • No expiration
  • Print 20 pages per month
  • 20% off on PDF purchases
  • Organize your research
  • Get updates on your journals and topic searches

$49/month

Start Free Trial

14-day Free Trial

Best Deal — 39% off

Annual Plan

  • All the features of the Professional Plan, but for 39% off!
  • Billed annually
  • No expiration
  • For the normal price of 10 articles elsewhere, you get one full year of unlimited access to articles.

$588

$360/year

billed annually
Start Free Trial

14-day Free Trial