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- Publisher
- Springer Journals
- Copyright
- Copyright © 2017 by Pleiades Publishing, Ltd.
- Subject
- Materials Science; Surfaces and Interfaces, Thin Films
- ISSN
- 1027-4510
- eISSN
- 1819-7094
- DOI
- 10.1134/S1027451017040139
- Publisher site
- See Article on Publisher Site
Abstract
The effect of preliminary low-energy (~1 keV) and low-dose (~1012–1014 cm–2) ion bombardment on the initial stages of growth of Si films on a CaF2/Si surface is investigated. Ordered nanocrystal phases (thickness less than 5–6 monolayers) and homogeneous epitaxial nanofilms (thickness more than 8–10 monolayers) of silicon are shown to be formed after annealing.
Journal
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques – Springer Journals
Published: Aug 24, 2017