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On the Control of Plasma Parameters and Active Species Kinetics in CF4+O2+Ar Gas Mixture by CF4/O2 and O2/Ar Mixing Ratios

On the Control of Plasma Parameters and Active Species Kinetics in CF4+O2+Ar Gas Mixture by... The effects of both CF4/O2 and Ar/O2 mixing ratios in three-component CF4 + O2 + Ar mixture on plasma parameters, densities and fluxes of active species determining the dry etching kinetics were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of CF4 for O2 at constant fraction of Ar in a feed gas produces the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF4/O2 gas mixtures. At the same time, the substitution of Ar for O2 at constant fraction of CF4 results in the monotonic increase in F atom density toward more oxygenated plasmas. The natures of these phenomena as well as theirs possible impacts on the etching/polymerization kinetics were discussed in details. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Plasma Chemistry and Plasma Processing Springer Journals

On the Control of Plasma Parameters and Active Species Kinetics in CF4+O2+Ar Gas Mixture by CF4/O2 and O2/Ar Mixing Ratios

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References (36)

Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media New York
Subject
Chemistry; Inorganic Chemistry; Classical Mechanics; Characterization and Evaluation of Materials; Mechanical Engineering
ISSN
0272-4324
eISSN
1572-8986
DOI
10.1007/s11090-017-9820-z
Publisher site
See Article on Publisher Site

Abstract

The effects of both CF4/O2 and Ar/O2 mixing ratios in three-component CF4 + O2 + Ar mixture on plasma parameters, densities and fluxes of active species determining the dry etching kinetics were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of CF4 for O2 at constant fraction of Ar in a feed gas produces the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF4/O2 gas mixtures. At the same time, the substitution of Ar for O2 at constant fraction of CF4 results in the monotonic increase in F atom density toward more oxygenated plasmas. The natures of these phenomena as well as theirs possible impacts on the etching/polymerization kinetics were discussed in details.

Journal

Plasma Chemistry and Plasma Processing – Springer Journals

Published: May 13, 2017

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