An experimental investigation is reported on the offset voltage of an integrated magnetic-field sensor based on a dual-collector lateral npn bipolar magnetotransistor and polysilicon resistors, with the magnetotransistor base region contained in a diffused well. It is found that the type of terminal connection selected determines the operating conditions and the way they influence the differential collector voltage. The offset voltage is reduced to below 1 mV, with the relative useful signal increased accordingly.
Russian Microelectronics – Springer Journals
Published: Jan 21, 2010
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