Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.
Russian Microelectronics – Springer Journals
Published: Sep 19, 2009
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