Nonlinear Recombination Waves in Zn-Doped Si at Fully Developed Instability

Nonlinear Recombination Waves in Zn-Doped Si at Fully Developed Instability A nonlinear theory of recombination waves in semiconductors is constructed that addresses quasi-neutrality breaking in the electron–hole plasma with fully developed instability. It is established that with increasing applied electric field a recombination wave of uniform amplitude is transformed into a traveling solitary domain; the domain formation manifests itself in the transition from almost sinusoidal to relaxation oscillations of current. A formula is derived that relates the domain velocity to the properties of the material and the current–voltage characteristic of the specimen. The predicted transformation of recombination waves is verified by checking against previously obtained experimental results concerning slow recombination waves in Si specimens with Zn doping compensation. It is found that a calculated field at which relaxation oscillations arise agrees with the measured one. The frequency of relaxation oscillations is examined as a function of applied field on the basis of the theory and the experiment. The calculated characteristic is shown to be in qualitative and quantitative agreement with the measured one. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Nonlinear Recombination Waves in Zn-Doped Si at Fully Developed Instability

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000011099.65573.52
Publisher site
See Article on Publisher Site

Abstract

A nonlinear theory of recombination waves in semiconductors is constructed that addresses quasi-neutrality breaking in the electron–hole plasma with fully developed instability. It is established that with increasing applied electric field a recombination wave of uniform amplitude is transformed into a traveling solitary domain; the domain formation manifests itself in the transition from almost sinusoidal to relaxation oscillations of current. A formula is derived that relates the domain velocity to the properties of the material and the current–voltage characteristic of the specimen. The predicted transformation of recombination waves is verified by checking against previously obtained experimental results concerning slow recombination waves in Si specimens with Zn doping compensation. It is found that a calculated field at which relaxation oscillations arise agrees with the measured one. The frequency of relaxation oscillations is examined as a function of applied field on the basis of the theory and the experiment. The calculated characteristic is shown to be in qualitative and quantitative agreement with the measured one.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 18, 2004

References

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