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A. Skvortsov, A. Orlov, S. Zuev (2012)
Diagnostics of degradation processes in the metal-semiconductor systemRussian Microelectronics, 41
M. Soestbergen, A. Mavinkurve, R. Rongen, K. Jansen, L. Ernst, Guoqi Zhang (2010)
Theory of aluminum metallization corrosion in microelectronicsElectrochimica Acta, 55
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Semiconductor materials and devices for tough operating conditions
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A. Skvortsov, A. Orlov, V. Muradov (2009)
Studying diffusion in multilayer thin-film structures on silicon by the contact melting techniqueTechnical Physics Letters, 35
C. Hu, J. Ohm, L. Gignac, C. Breslin, S. Mittal, G. Bonilla, D. Edelstein, R. Rosenberg, Samuel Choi, J. An, A. Simon, M. Angyal, L. Clevenger, J. Maniscalco, T. Nogami, C. Penny, Ben Kim (2012)
Electromigration in Cu(Al) and Cu(Mn) damascene linesJournal of Applied Physics, 111
T. Nguyen, P. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau (2011)
Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current techniqueMicroelectron. Reliab., 51
We study the degradation of aluminum metallization under the thermal impact induced by rectangular current pulses with an amplitude of j < 8 × 1010 A/m2 and a length of τ < 800 μs and experimentally investigate the thermal degradation of a metal film under the action of phase transformations, specifically, metal fusion and contact melting in a metal-semiconductor system during the passage of current pulses with a power above the critical value P cr. It is demonstrated that the main mechanism of the fusion of a metallization stripe is related to heat release at the interface between the liquid and solid phases under the thermal impact. The velocities of liquid-phase propagation (10–50 m/s) along the metallization stripe have been determined in the experiment as a function of the electric power of the current pulse. The stresses in the silicon surface layers near the nonstationary heat source have been estimated. It is shown that current pulses with an electric power of ∼0.7P cr induce the stresses sufficient for the formation of dislocations. The formation of dislocation half-loops in the silicon surface layers near the thermal impact source upon the passage of current pulses with a specified power has been observed.
Russian Microelectronics – Springer Journals
Published: May 19, 2016
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