Nitrogen ion implantation effects on the structural, optical and electrical properties of CdSe thin film

Nitrogen ion implantation effects on the structural, optical and electrical properties of CdSe... In the present study, thin l fi ms of cadmium selenide (CdSe) are deposited on ITO substrate by electrodeposition method using aqueous solution of 3CdSO ·8H O and SeO . These films are implanted with 40 keV N ions with different fluencies i.e. 4 2 2 15 15 16 16 2 1 × 10 , 5 × 10 , 1 × 10 and 5 × 10 ions/cm using a beam current of 0.9 µA. The structural, morphological, optical and electrical properties of pristine and nitrogen ion-implanted CdSe thin films are analyzed using XRD, SEM, AFM, UV-PL Spectrophotometer and I–V four probes setup. XRD analysis revealed the effects of nitrogen ions on the structural parameters such as grain size, FWHM, micro strain and dislocation density etc. Crystallanity of the material increased with increase in implantation dose. SEM and AFM analysis show decrease in the surface roughness with implantation. From the optical studies, band gap value decreased from 2.50 to 2.29 eV with increase in N implantation doses. Noticeable changes in the electrical properties are also reported. The effect of N ion implantation on the properties of CdSe thin films are discussed on the basis of lattice disorder. 1 Introduction The finest estimations of http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Nitrogen ion implantation effects on the structural, optical and electrical properties of CdSe thin film

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Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-018-9376-6
Publisher site
See Article on Publisher Site

Abstract

In the present study, thin l fi ms of cadmium selenide (CdSe) are deposited on ITO substrate by electrodeposition method using aqueous solution of 3CdSO ·8H O and SeO . These films are implanted with 40 keV N ions with different fluencies i.e. 4 2 2 15 15 16 16 2 1 × 10 , 5 × 10 , 1 × 10 and 5 × 10 ions/cm using a beam current of 0.9 µA. The structural, morphological, optical and electrical properties of pristine and nitrogen ion-implanted CdSe thin films are analyzed using XRD, SEM, AFM, UV-PL Spectrophotometer and I–V four probes setup. XRD analysis revealed the effects of nitrogen ions on the structural parameters such as grain size, FWHM, micro strain and dislocation density etc. Crystallanity of the material increased with increase in implantation dose. SEM and AFM analysis show decrease in the surface roughness with implantation. From the optical studies, band gap value decreased from 2.50 to 2.29 eV with increase in N implantation doses. Noticeable changes in the electrical properties are also reported. The effect of N ion implantation on the properties of CdSe thin films are discussed on the basis of lattice disorder. 1 Introduction The finest estimations of

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: May 29, 2018

References

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