Nitrogen concentration in ZnO films grown by magnetron sputtering in an Ar-NO plasma

Nitrogen concentration in ZnO films grown by magnetron sputtering in an Ar-NO plasma Nitrogen-doped ZnO films are grown on (0001)-oriented sapphire substrates by magnetron RF sputtering in an Ar-NO plasma at a pressure of about 10 mTorr and Ar-to-NO flow-rate ratios of 0–90. It is revealed that the nitrogen concentration in the films depends on the Ar-to-NO flow-rate ratios as well as on the nitrogen concentration in the process environment. The highest doping level of nitrogen (4.3 at %) is achieved in films deposited at a substrate temperature of 300°C and an Ar-to-NO flow-rate ratio of 90:1. These films are found to contain Zn-N bonds, but not N-O bonds. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Nitrogen concentration in ZnO films grown by magnetron sputtering in an Ar-NO plasma

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2007 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739707010039
Publisher site
See Article on Publisher Site

Abstract

Nitrogen-doped ZnO films are grown on (0001)-oriented sapphire substrates by magnetron RF sputtering in an Ar-NO plasma at a pressure of about 10 mTorr and Ar-to-NO flow-rate ratios of 0–90. It is revealed that the nitrogen concentration in the films depends on the Ar-to-NO flow-rate ratios as well as on the nitrogen concentration in the process environment. The highest doping level of nitrogen (4.3 at %) is achieved in films deposited at a substrate temperature of 300°C and an Ar-to-NO flow-rate ratio of 90:1. These films are found to contain Zn-N bonds, but not N-O bonds.

Journal

Russian MicroelectronicsSpringer Journals

Published: Feb 1, 2007

References

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