Nitrogen-doped ZnO films are grown on (0001)-oriented sapphire substrates by magnetron RF sputtering in an Ar-NO plasma at a pressure of about 10 mTorr and Ar-to-NO flow-rate ratios of 0–90. It is revealed that the nitrogen concentration in the films depends on the Ar-to-NO flow-rate ratios as well as on the nitrogen concentration in the process environment. The highest doping level of nitrogen (4.3 at %) is achieved in films deposited at a substrate temperature of 300°C and an Ar-to-NO flow-rate ratio of 90:1. These films are found to contain Zn-N bonds, but not N-O bonds.
Russian Microelectronics – Springer Journals
Published: Feb 1, 2007
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