ISSN 10637397, Russian Microelectronics, 2013, Vol. 42, No. 8, pp. 439–447. © Pleiades Publishing, Ltd., 2013.
Original Russian Text © F.A. Kuznetsov, T.P. Smirnova, N.I. Fainer, N.B. Morozova, I.K. Igumenov, 2012, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy
Elektronnoi Tekhniki, 2012, No. 2, pp. 4–12.
Processes of deposition from a gaseous phase were
a substantial part of the technologies developed and
applied for the creation of modern solidstate elec
tronics. Further progress in electronics requires a con
siderable improvement in the utilization of properties
of materials and the introduction of novel materials.
The need to control materials’ properties at the atomic
or closetoatomic scale makes the application of pro
cesses based on the formation of solids from a gaseous
phase even more urgent.
In recent decades, the divisions of materials chem
istry dealing with the problems of functional materials
technology have progressed towards the wider applica
tion of the processes of gasphase deposition. The new
results concern techniques for obtaining extrapure
grade substances, synthesis of numerous volatile com
pounds of different elements, an understanding of the
features of the formation of solid materials from a
gaseous phase containing sophisticated volatile mole
Below, the progress in this field is illustrated by the
example of the use of chemical vapor deposition pro
cesses (CVD) in the technology of nanoelectronics
The experience acquired by the authors of this arti
cle can be useful not only in nanoelectronics technol
ogy but also in some other branches of high technology
where material properties must be controlled at the
nanometer scale (catalysts, optical systems, and preci
In MOSFET devices (a fieldeffect transistor based
on a metal–oxide–semiconductor structure), SiO
was used as a gate dielectric and insulator of intercon
nections of elements of integrated circuits. In devices
of nanometer dimensions, this dielectric should be
replaced by two different materials: a dielectric with a
high dielectric constant for a gate (high
) and a
dielectric with a low dielectric constant for intercon
). In the works of the authors, CVD
processes with the use of unconventional initial
reagents (volatile complex and organoelement com
pounds) were employed to obtain layers of hafnium
dioxide and solid solutions of HfO
with some other
dielectrics and SiC
ers whose dielectric constant is lower than that of SiO
The processes of CVD of metalorganic compounds
(MOCVD) were also used to synthesize highly con
ductive Ru and Cu metal layers.
On the whole, the program of investigations
included the following aspects:
(1) Choice of volatile compounds of elements
which are used in materials of electronics devices.
(2) Development of efficient techniques of synthe
sis and purification of the chosen compounds.
(3) Investigation of the physicochemical properties
of precursors and the processes of their transformation
under the conditions of thermal and nonthermal acti
(4) Investigation of the processes of the formation
of materials with the use of the chosen precursors.
(5) Investigation of the composition, structure, and
functional properties of the synthesized materials.
The films were obtained by CVD upon thermal and
New Organometallic Precursors and Processes for Chemical Vapor
Deposition in the Technology of Nanomaterials
F. A. Kuznetsov, T. P. Smirnova, N. I. Fainer, N. B. Morozova, and I. K. Igumenov
Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences,
pr. Akademika Lavrent’eva 3, Novosibirsk, 630090 Russia
—Processes of chemical vapor deposition (CVD) of metal and dielectric (high
) films with
the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed.
Complex investigation of the chemical and phase composition and structure of (HfO
= Al, Sc), and silicon carbonitrides and oxycarbonitrides was carried out. It was shown that
the resulting materials enjoy a number of unique functional properties, which makes them promising for
application in micro, nano, and optoelectronic devices.
: MOCVD technique, metal films, dielectric films, Xray diffraction, phase composition, properties