New organometallic precursors and processes for chemical vapor deposition in the technology of nanomaterials

New organometallic precursors and processes for chemical vapor deposition in the technology of... Processes of chemical vapor deposition (CVD) of metal and dielectric (high-k and low-k) films with the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed. Complex investigation of the chemical and phase composition and structure of (HfO2)1 − x (Me 2O3) x double oxides (where Me = Al, Sc), and silicon carbonitrides and oxycarbonitrides was carried out. It was shown that the resulting materials enjoy a number of unique functional properties, which makes them promising for application in micro-, nano-, and optoelectronic devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

New organometallic precursors and processes for chemical vapor deposition in the technology of nanomaterials

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971308009X
Publisher site
See Article on Publisher Site

Abstract

Processes of chemical vapor deposition (CVD) of metal and dielectric (high-k and low-k) films with the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed. Complex investigation of the chemical and phase composition and structure of (HfO2)1 − x (Me 2O3) x double oxides (where Me = Al, Sc), and silicon carbonitrides and oxycarbonitrides was carried out. It was shown that the resulting materials enjoy a number of unique functional properties, which makes them promising for application in micro-, nano-, and optoelectronic devices.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2013

References

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